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Effects of Atomic Oxygen Irradiation on Transparent Conductive Oxide Thin Films
Transparent conductive oxide (TCO) thin film is a kind of functional material which has potential applications in solar cells and atomic oxygen (AO) resisting systems in spacecrafts. Of TCO, ZnO:Al (ZAO) and In2O3:Sn (ITO) thin films have been widely used and investigated. In this study, ZAO and ITO thin films were irradiated by AO with different amounts of fluence. The as-deposited samples and irradiated ones were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and Hall-effect measurement to investigate the dependence of the structure, morphology and electrical properties of ZAO or ITO on the amount of fluence of AO irradiation. It is noticed that AO has erosion effects on the surface of ZAO without evident influences upon its structure and conductive at most 21.7%.
作 者： Wang Wenwen Wang Tianmin 作者單位： Center of Material Physics and Chemistry, School of Science, Beijing University of Aeronautics and Astronautics, Beijing 100083, China 刊 名： 中國航空學(xué)報（英文版） ISTIC 英文刊名： CHINESE JOURNAL OF AERONAUTICS 年，卷(期)： 2007 20(5) 分類號： V2 關(guān)鍵詞： transparent conductive oxide thin film ZnO:Al In2O3:Sn atomic oxygen erosion electrical properties【Effects of Atomic Oxygen Irradiation】相關(guān)文章：
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